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 SES Series
Ultra Small ESD Protector SES5VN1006-2B
ROHS
Description
The SES5VN1006-2B ESD protector is designed to replace multilayer varistors (MLVs) in portable applications such as cell phones, notebook computers, and PDA's. They feature large cross-sectional area junctions for conducting high transient currents, offer desirable electrical characteristics for board level protection, such as fast response time, lower operating voltage, lower clamping voltage and no device degradation when compared to MLVs. The SES5VN1006-2B protects sensitive semiconductor components from damage or upset due to electrostatic discharge (ESD) and other voltage induced transient events. The SES5VN1006-2B is available in a DFN-2 package with working voltages of 5 volt. It gives designer the flexibility to protect one bidirectional line in applications where arrays are not practical. Additionally, it may be "sprinkled" around the board in applications where board space is at a premium. It may be used to meet the ESD immunity requirements of IEC 61000-4-2, Level 4 (15kV air, 8kV contact discharge)
Feature
120 Watts peak pulse power (tp = 8/20s) Transient protection for data lines to IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) Small package for use in portable electronics Suitable replacement for MLVs in ESD protection applications Protect one I/O or power line Low clamping voltage Stand off voltages: 5V Low leakage current Solid-state silicon-avalanche technology Small Body Outline Dimensions: 1.0mmx0.6mmx0.5mm Equivalent to 0402 package
Applications
Cell Phone Handsets and Accessories Personal Digital Assistants (PDA's) Notebooks, Desktops, and Servers Portable Instrumentation Cordless Phones Digital Cameras Peripherals MP3 Players
Ultra Small ESD Protector
1
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SE**** Series
ESD Protector SEP2V8-4ULVC
ROHS
Electrical characteristics @25(unless otherwise specified)
Parameter
Working Voltage Breakdown voltage Reverse Leakage Current Resistance Junction Capacitance
Symbol
VRWM VBR IR Rd Cj
Conditions
Min.
Typ.
Max.
5
Units
V V A pF
It =1mA VRWM =3V T=25
6.0
6.8
8.0 0.1
0.65 VR=0V f = 1MHz 22
Absolute maximum rating @25
Rating
Peak Pulse Power ( tP = 8/20S ) Repetitive peak pulse current ( tP = 8/20S ) Junction temperature Lead Soldering Temperature Operating Temperature Storage Temperature
Symbol
Ppk Ipp Tj TL TJ TSTG
Value
140 9 125 260 (10 sec) -40 to +125 -55 to +150
Units
W A
Typical Characteristics
Product dimension and foot print
Ultra Small ESD Protector
2 www.goodark.com
SES Series
Ultra Small ESD Protector SES5VN1006-2B
ROHS
Product dimension and foot print
Top VieW
Side View
Common Dimensions (mm) PKG. Ref. A A1 Bottom View A3 D E B L e 0.95 0.55 0.20 0.45 Min. 0.4 0.00 X1: Extreme thin Nom. 0.125 Ref. 1.00 0.60 0.25 0.50 0.65 BSC 1.05 0.65 0.30 0.55 Max 0.5 0.05
Ultra Small ESD Protector
3
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SES Series
TVS for Surge Protection SES5VT323
ROHS
Revision History
Revision
1.0
Date
2008-7-3
Changes
-
Ultra Small ESD Protector
4 www.goodark.com


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